Laboratory for Nanoelectronics and Nanophotonics

Areas of Research

• Study of epitaxial nanostructures of different semiconductor compounds in terms of their growing, their optical and electrical properties in order to identify new areas of their instrumental application.

• Design and study of properties of semiconductor photodetectors and emitters of infrared and terahertz ranges based on CdHgTe structures with quantum wells grown by molecular beam epitaxy.

• Study of electrical neutrality, radiation resistance and structural defects in a variety of semiconductors.

• Research of heterostructures with Ge / Si quantum dots grown by molecular beam epitaxy and devices for solar energy conversion based on them.

• Design of semiconductor-based devices with multiple quantum wells grown with the use of volatile organometallic compounds: "blue" GaInN / GaN / Al2O3 and "red" AlGaInP / GaAs LEDs.

• Design of high-frequency photodetectors based on multilayer epitaxial silicon layers (several tens of layers) with germanium quantum dots grown with the use of molecular beams.

• Development of an effective method for producing a raw material for the growth of epitaxial graphene by cubic silicon carbide (3C-SiC) heteroepitaxy on silicon from methylsilane (CH3SiH3).

• Synthesis of vertically aligned nanowires on silicon for their use in the integration of direct gap semiconductor compounds A3B5 and silicon.

• Development of methods for the preparation of ordered organic layers on inorganic crystal surfaces necessary for molecular electronics.

• Design of nanoscale semiconductor-on-insulator structures and devices based on them, e.g. double gate transistors, whose quantum-mechanical effect manifests itself through size quantization induced by transverse electrostatic field due to the large potential difference between the gates.

• Development of methods for the study of morphology and electronic properties of the surface (the surface potential) of solids: semiconductors, polymers, metals and dielectrics used in micro- and optoelectronics.

• Establishment of laws in the electronic properties of semiconductor materials with intrinsic lattice defects, as well as development of physical models showing the Fermi level fixing mechanism in volume and on the surface of the defective semiconductor.

Partners

1. Education and Research Center of Microelectronics and Nanotechnology, University of Rzeszow (Rzeszow, Poland)

2. SPE “Karat” (Lviv, Ukraine)

3. OJSC Polyus (Moscow, Russia)

4. Research Institute of Semiconductor Devices, JSC (Tomsk, Russia)

5. SDPC Orion (Moscow, Russia)

6. Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences (ISP SB RAS)

7. Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences (Tomsk, Russia)

8. Tohoku University (Sendai, Japan)

9. St. Petersburg Academic University of Russian Academy of Sciences (St. Petersburg, Russia)

10. Fritz Haber Institute of the Max Planck Society (Berlin, Germany)

11. Loughborough University (Loughborough, UK)

Equipment

AFM Solver HV by NT-MDT, Zelenograd.

Surface morphology, distribution of electric and magnetic properties, stiffness characteristics, etc.

Solver HV Specifications:

• Maximum scan range in XY: 100x100 mm2;

• Maximum range of Z scanning: 6 microns;

• Z axis resolution: 0.1–0.3 nm;

• X and Y resolution: 10–50 nm.

Nanoheterostructure Admittance Spectroscopy Automated Set

Electrical measurement of semiconductor structures in a wide temperature range (8–475 K), applied external displacement within ± 40 V and test signal frequencies from 20 Hz to 2 MHz.

Parts of the set:

PC with a built-in NI-GPIB, cryocooler of closed-cycle helium cryostat, Agilent E4980A LCR-meter, LakeShore temperature controller, vacuum station with turbo-molecular pump, cryocompressor of closed-cycle helium cryostat.

Katun 100 Automated High-Vacuum Molecular Beam Epitaxy Set

Growth of epitaxial multilayer film nanostructures in ultrahigh vacuum.

Advantages:

• Low precision-controlled rate of growth of epitaxial films, quantum structures that enable highly reproducible thin films (10 1000 nm.);

• Precise temperatures of molecular beam substrates and sources, and mechanical control of molecular source valves, which allows to grow epitaxial films with a predetermined thickness and profile of composition and doping level;

• Non-destructive means of analyzing film structure and composition, control of molecular beams and composition of residual gases, which allows high reproducibility of technological processes.

Centre of Excellence